PRAM process technology

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309906

G. Koh, Y. Hwang, Sun-Ghil Lee, Suyoun Lee, K. Ryoo, Joon-Min Park, Yun-Heub Song, Soomin Ahn, Changwook Jeong, F. Yeung, Y. Kim, J.-B. Park, G. Jeong, H. Jeong, Keunnam Kim

引用次数: 9

Abstract

PRAM(Phase-Change RAM) is a promising memory that can solve the problems of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. We presented process factors which affect the writing current and the result of improvement. Finally we demonstrated results of 64Mb PRAM integration based on 0.18/spl mu/m CMOS technology.

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PRAM工艺技术

PRAM(Phase-Change RAM)是一种很有前途的存储器，它可以解决传统存储器的问题，并且具有近乎理想的存储特性。我们回顾了高密度PRAM集成的问题。减小写入电流是实现高密度PRAM最迫切需要解决的问题。提出了影响书写电流和改进效果的工艺因素。最后，我们展示了基于0.18/spl mu/m CMOS技术的64Mb PRAM集成结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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