Electrical modeling and analysis of lead-bonded and wire-bonded /spl mu/BGA/sup /spl reg// packages for high-speed memory applications

Abstract

Lead-bonded /spl mu/BGA (/spl mu/BGA/sup /spl reg//) and wire-bonded /spl mu/BGA (/spl mu/BGA/sup /spl reg//-W) packages with flex- and laminate-based substrates have been developed for high-speed memory devices. This work presents the inductance, capacitance, and resistance values for lead-bonded and wire-bonded /spl mu/BGA packages obtained from simulation study to demonstrate and compare their electrical performance. The effect of the bonding technology (lead or wire bond), die-shrink and the type of substrate material on the electrical performance for the /spl mu/BGA package was analyzed by simulation. To verify these results, they were compared to the experimentally measured values. In addition, the electrical performance limitation of the /spl mu/BGA packages was determined by conducting simulation analysis to obtain S-parameters. The bandwidth of the /spl mu/BGA packages was predicted based on the return loss and insertion loss calculated from the S-parameters.