Testing CMOS logic gates for: realistic shorts

Brian Chess, Anthony Freitas, F. Ferguson, T. Larrabee
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引用次数: 43

Abstract

It is assumed that tests generated using the single stuck-at fault model will implicitly detect the vast majority of fault-causing defects within logic elements. This may not be the case. In this paper we characterize the possible shorts in the combinational cells in a standard cell library. The characterization includes errors on the cell outputs, errors on the cell inputs, and excessive quiescent current. The characterization provides input vectors to stimulate these errors. After characterizing the faults that occur due to possible electrical shorts, we compare the coverage of the logic faults using a single stuck-at test set and tests developed specifically to detect these shorts. We discuss the effectiveness of I/sub DDQ/ testing for these faults.
测试CMOS逻辑门:现实的短裤
假设使用单个卡在故障模型生成的测试将隐式地检测逻辑元素中导致故障的绝大多数缺陷。事实可能并非如此。本文描述了标准单元库中组合单元中可能出现的短路。表征包括单元输出上的误差,单元输入上的误差和过多的静态电流。表征提供了刺激这些误差的输入向量。在描述了由于可能的电气短路而发生的故障后,我们使用单个卡住测试集和专门为检测这些短路而开发的测试来比较逻辑故障的覆盖范围。我们讨论了I/sub DDQ/测试对这些故障的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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