Exploring the Benefits of Cryogenic Temperatures for Co and Ru Metallizations

D. Tierno, I. Ciofi, O. Pedreira, B. Parvais, K. Croes
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Abstract

We benchmarked Co and Ru metallizations against Cu at cryogenic temperatures (5K-300K) by using imec resistivity model and actual interconnects, with widths between 14 and 64 nm. We observed a decrease in resistance as temperature decreases, with Ru and Co exhibiting the largest drop (~50%) due to their larger Temperature Coefficients of Resistance (TCR). For 20nm-wide lines, the calculated TCR was ~2000 ppm/°C for Ru and Co compared to ~1000 ppm/°C for Cu. However, we show that only Ru outperforms Cu, with the cross-over occurring at 100K for 26nm-wide lines, potentially boosting the performances of systems operating at cryogenic temperatures.
探索低温对钴和钌金属化的好处
在低温(5K-300K)条件下,利用imec电阻率模型和宽度在14 ~ 64 nm之间的实际互连,对Co和Ru金属化与Cu金属化进行了基准测试。我们观察到电阻随着温度的降低而降低,其中Ru和Co由于其较大的电阻温度系数(TCR)而表现出最大的下降(~50%)。对于20nm宽的谱线,Ru和Co的计算TCR为~2000 ppm/°C,而Cu的TCR为~1000 ppm/°C。然而,我们发现只有Ru优于Cu,对于26nm宽的线,在100K时发生交叉,可能会提高系统在低温下工作的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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