Meng Zhen, Yan Yue-peng, Wang Chen, Zhang Xingcheng, Liu Mou
{"title":"Electrical transmission characteristics of differential TSV structures in 3D TSV packaging","authors":"Meng Zhen, Yan Yue-peng, Wang Chen, Zhang Xingcheng, Liu Mou","doi":"10.1109/EPTC.2015.7412269","DOIUrl":null,"url":null,"abstract":"The electrical characteristics of Through Silicon Via (TSV) have been frequently studied recently, but most studies focused on the single-ended TSV structure. Specially, study about the differential TSV structure is rather limited. In this study, three-dimensional electromagnetic simulation software HFSS was used to analyze the transmission characteristics of the differential signal of the differential TSV structure. Firstly, the differential TSV structure was modeled to analyze the impact on the transmission characteristics of differential signal by the main structural parameters achieved in the mainstream process. Our results indicate that the forward transmission gain increases when the TSV diameter and the thickness of the SiO2 oxide isolation layer increase. However, the forward transmission gain decreases when the TSV height increases. Secondly, the differential TSV structure in the TSV arrangement was modeled. The influence of the pitch of the differential TSV pair on the transmission performance of the differential signal is not a one-way process. Finally, the conical differential TSV structure was modeled to study the influence of non-ideal cylinder shape on the transmission performance of the differential signal. Our results indicate that the forward transmission gain increases when the upper diameter increases and the bottom diameter keeps unchanged.","PeriodicalId":418705,"journal":{"name":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 17th Electronics Packaging and Technology Conference (EPTC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPTC.2015.7412269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The electrical characteristics of Through Silicon Via (TSV) have been frequently studied recently, but most studies focused on the single-ended TSV structure. Specially, study about the differential TSV structure is rather limited. In this study, three-dimensional electromagnetic simulation software HFSS was used to analyze the transmission characteristics of the differential signal of the differential TSV structure. Firstly, the differential TSV structure was modeled to analyze the impact on the transmission characteristics of differential signal by the main structural parameters achieved in the mainstream process. Our results indicate that the forward transmission gain increases when the TSV diameter and the thickness of the SiO2 oxide isolation layer increase. However, the forward transmission gain decreases when the TSV height increases. Secondly, the differential TSV structure in the TSV arrangement was modeled. The influence of the pitch of the differential TSV pair on the transmission performance of the differential signal is not a one-way process. Finally, the conical differential TSV structure was modeled to study the influence of non-ideal cylinder shape on the transmission performance of the differential signal. Our results indicate that the forward transmission gain increases when the upper diameter increases and the bottom diameter keeps unchanged.