Development of Chip-to-Wafer (C2W) bonding process for high density I/Os Fan-Out Wafer Level Package (FOWLP)

S. Lim, S. Chong, M. Ding, V. S. Rao
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引用次数: 1

Abstract

In the current mobile electronics market, there is a great demand of electronics products with better performance, smaller foot print and greater package functionality with a lower manufacturing cost. Smart phones and tablets are some of the portable electronics devices that require more functions, smaller form factor and reduced power consumption requirements [1]. To address these requirements, the Multi-Chip Fan-Out Wafer Level Package (FOWLP) technology promises an alternative technology for high performance and multi-die packaging in FOWLP technology [2]. In conventional flip chip assembly, the advantages of using Cu pillar and solder micro bumps are mainly because of it allows for fine pitch applications and superior power management in terms of thermal and electrical [3]. The major difference in using copper pillar with solder micro bumps is that the solder volume are significantly reduced on each solder bump. Furthermore, the lesser solder volume on the Cu pillar bumps makes it difficult for solder self-alignment during solder reflow process [4]. Hence it is critical that good chip placement accuracy is needed in the flip-chip bonder for good solder interconnect formation especially for our work in the new RDL-first FOWLP technology with multiple die and high pin count applications [5]. In this paper, we present the chip to wafer assembly for multiple die on the RDL-First FOWLP approach. Chip-to-Wafer assembly is a promising technology for high density package application to overcome the limitation of Wafer-to-Wafer boding in terms of die stacking process yield and bonding placement accuracy on wafers. Our test vehicle is a large multi-chip package of 20×20mm2 fabricated using the RDL-First FOWLP approach. There are 2400 I/Os on the FOWLP package. The C2W flip chip process is done to attach the 3 test chips onto the 3 layers RDL film onto the 12 inch glass carrier with sacrificial layer using the mass reflow method. The assembly process was optimized and samples are built to subject to JEDEC Moisture Sensitivity Test Level 3 for reliability assessment.
高密度I/ o扇出晶圆级封装(FOWLP)中C2W键合工艺的开发
在当前的移动电子市场中,对性能更好、占地面积更小、封装功能更强、制造成本更低的电子产品的需求很大。智能手机和平板电脑是一些便携式电子设备,需要更多的功能,更小的外形和更低的功耗要求[1]。为了满足这些要求,多芯片扇出晶圆级封装(FOWLP)技术有望在FOWLP技术中提供高性能和多模封装的替代技术[2]。在传统的倒装芯片组装中,使用铜柱和焊料微凸点的优势主要是因为它允许细间距应用和在热电方面的卓越电源管理[3]。使用铜柱与焊料微凸点的主要区别在于每个焊料凸点上的焊料体积显着减少。此外,铜柱凸起处的焊料体积较小,使得焊料在回流过程中难以自对准[4]。因此,在倒装片键合机中需要良好的芯片放置精度以形成良好的焊料互连是至关重要的,特别是对于我们在具有多芯片和高引脚数应用的新型RDL-first FOWLP技术中的工作[5]。在本文中,我们提出了基于RDL-First FOWLP方法的芯片到晶圆组装。芯片到晶圆组装技术是一种很有前途的高密度封装技术,它克服了晶圆到晶圆粘合在晶圆上的芯片堆叠工艺良率和粘合放置精度方面的限制。我们的测试车辆是使用RDL-First FOWLP方法制造的大型多芯片封装20×20mm2。FOWLP包上有2400个I/ o。采用C2W倒装芯片工艺,采用质量回流法将3个测试芯片附着在带有牺牲层的12英寸玻璃载体上的3层RDL膜上。对装配工艺进行了优化,并对样品进行了JEDEC 3级湿敏试验,进行了可靠性评估。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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