Microstructure Analysis Based on 3D reconstruction Model and Transient Thermal Impedance Measurement of Resin-reinforced Sintered Ag layer for High power RF device

X. Hu, H.A. Martina, R. Poelma, J.L. Huang, H. Rijckevorsel, H. Scholten, E.C.P. Smits, W. V. van Driel, G.Q. Zhang
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Abstract

Resin-reinforced silver (Ag) sintering material is an effective and highly reliable solution for power electronics packaging. The hybrid material’s process parameters strongly influence its microstructure and pose a significant challenge in estimating its effective properties as a thin interconnect layer. This research demonstrates a novel 3D reconstruction methodology for the microstructural investigation of the resin-reinforced Ag sintering material from OverMolded Plastic (OMP) packages. Based on the reconstructed models with different sintering parameters (temperature and time), the fraction of Ag and Resin volume distribution, the connectivity of silver particles, and the tortuosity factors were estimated. A 99% connectivity of sintered Ag particles was achieved with various sintering conditions, such as 200°C for 2 hours, 200°C for 4 hours, and 250°C for 2 hours. However, coarsening of Ag particles was promoted when sintered at 250°C. Increasing the sintering time at 200°C had insignificant changes. The estimated tortuosity factor also indicated that sintering at 250°C provides the shortest heat transport path between the semiconductor die and the package substrate. In order to quantify the microstructural findings, the OMP packages’ thermal performance with different sintering conditions (temperature, time, and interconnect thickness) was experimentally assessed. Although the experimental measurements were less sensitive to the effective interface thermal resistances’, the measurement results show a good correlation with the microstructural analysis. Sintering the Resin-reinforced Ag sintering material at higher temperatures (250°C) seems to improve the package thermal performance, and increasing the sintering time at 200°C has a negligible effect.
基于三维重建模型和瞬态热阻抗测量的高功率射频器件树脂增强烧结银层微观结构分析
树脂增强银(Ag)烧结材料是一种高效可靠的电力电子封装解决方案。杂化材料的工艺参数严重影响其微观结构,并对其作为薄互连层的有效性能的估计提出了重大挑战。本研究展示了一种新的三维重建方法,用于研究覆盖塑料(OMP)包装中树脂增强银烧结材料的微观结构。基于不同烧结参数(温度和时间)下的重构模型,估计了银和树脂的体积分布、银颗粒的连连性和扭曲系数。在200°C 2小时、200°C 4小时和250°C 2小时的烧结条件下,烧结银颗粒的连通性达到99%。然而,在250℃烧结时,银颗粒的粗化得到了促进。在200℃下延长烧结时间,烧结性能变化不大。估计的弯曲系数还表明,在250℃的烧结条件下,半导体芯片和封装衬底之间的热传递路径最短。为了量化微观结构的发现,实验评估了不同烧结条件(温度、时间和互连厚度)下OMP封装的热性能。虽然实验测量结果对有效界面热阻的敏感性较低,但测量结果与微观结构分析具有良好的相关性。在较高温度(250℃)下烧结树脂增强Ag烧结材料似乎可以改善封装的热性能,而在200℃下增加烧结时间的影响可以忽略不计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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