Understanding clustering of defects in a sub-0.5 /spl mu/m CMOS fabricator

A. Satya
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引用次数: 3

Abstract

Over two decades of bipolar-experience has previously alerted one to the fact that the extent of defect clustering, assumed in the CMOS yield models, may not hold for defects monitored on microelectronic test structures (MTS). Tracing the defect clustering from inline CMOS MTS, we now describe a viable yield prediction model using data from the various inline monitors, which also helps reconcile the questions raised earlier. Such a yield-bridge between the MTS-data and the product yield establishes the validity of the yield model and assumptions therein.
了解在低于0.5 /spl μ m的CMOS制造工艺中缺陷的聚类
二十多年的双极经验已经提醒人们注意这样一个事实,即CMOS产率模型中假设的缺陷聚类程度可能不适用于微电子测试结构(MTS)上监测的缺陷。跟踪内联CMOS MTS的缺陷聚类,我们现在使用来自各种内联监视器的数据描述了一个可行的良率预测模型,这也有助于调和前面提出的问题。mts数据与产品良率之间的这种良率桥梁建立了良率模型及其假设的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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