The effects of elliptical gate cross section on carbon nanotube gate-all-around field effect transistor

Hao Wang, Sheng Chang, Cheng Wang, Yue Hu, Hongyu He, Jin He, Qingxing He, Caixia Du, Shengju Zhong
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引用次数: 2

Abstract

In this paper, the gate-all-around carbon nanotube field effect transistor (FET) with elliptical shaped gate is studied with numerical simulation to explore the gate dielectric variation effects. The simulations are carried out with the three dimensional self-consistence Poisson-Schrodinger equations with the non-equilibrium Green's function method. The on current, potential distribution, local density of states, and transmission coefficients of the devices of different geometry are examined. The performances of elliptical shaped gate device are compared to the round shaped gate ones and it is observed that the geometry has notable effects on the characteristics of the devices.
椭圆栅极截面对碳纳米管栅极-全能场效应晶体管的影响
本文采用数值模拟的方法研究了带椭圆栅极的栅极-全能碳纳米管场效应晶体管(FET)的栅极介电变化效应。采用非平衡格林函数法对三维自洽泊松-薛定谔方程进行了数值模拟。研究了不同几何形状器件的导通电流、电位分布、局部态密度和透射系数。比较了椭圆栅极器件与圆形栅极器件的性能,发现几何形状对器件的性能有显著影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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