Recent trends in 300-mm plasma equipment

G. Vinogradov
{"title":"Recent trends in 300-mm plasma equipment","authors":"G. Vinogradov","doi":"10.1109/PPID.2003.1200949","DOIUrl":null,"url":null,"abstract":"The main development trends of 300-mm plasma equipment, particularly etchers, are further increasing competition between capacitive and inductive plasma sources. Capacitive plasma sources increase excitation frequency in order to attain low-pressure high-density plasma conditions, while inductive sources essentially shrink the discharge gap and cover the low gas residence time range previously occupied exclusively by their capacitive counterparts. Both systems seem to be converging at the very limit for advanced oxide etchers. Wide-gap inductive sources are successfully replacing capacitive systems in polysilicon and metal etch. Microwave systems are still in the minority and will fail to occupy a noticeable place in the 300-mm market in the near future.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200949","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

The main development trends of 300-mm plasma equipment, particularly etchers, are further increasing competition between capacitive and inductive plasma sources. Capacitive plasma sources increase excitation frequency in order to attain low-pressure high-density plasma conditions, while inductive sources essentially shrink the discharge gap and cover the low gas residence time range previously occupied exclusively by their capacitive counterparts. Both systems seem to be converging at the very limit for advanced oxide etchers. Wide-gap inductive sources are successfully replacing capacitive systems in polysilicon and metal etch. Microwave systems are still in the minority and will fail to occupy a noticeable place in the 300-mm market in the near future.
300毫米等离子体设备的最新趋势
300mm等离子体设备,特别是蚀刻机的主要发展趋势是电容式和电感式等离子体源之间的竞争进一步加剧。电容性等离子体源提高激发频率以达到低压高密度等离子体条件,而电感性等离子体源本质上缩小了放电间隙并覆盖了以前由电容性等离子体独占的低气体停留时间范围。这两种系统似乎在高级氧化物蚀刻机的极限上收敛。宽间隙电感源在多晶硅和金属蚀刻中成功地取代了电容系统。微波系统仍然处于少数地位,在不久的将来将无法在300毫米市场占据显著的地位。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信