Lasing characteristics of MOVPE grown 1.5μΜ GalnAsP LD using directly bonded InP/Si substrate

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947472

N. Hayasaka, T. Nishiyama, Y. Onuki, N. Kamada, Xu Han, Periyanayagam Gandhi Kallarasan, Kazuki Uchida, Hirokazu Sugiyama, Masaki Aikawa, K. Shimomura

引用次数: 1

Abstract

Lasing characteristics dependent on the bonding temperature for 1.5μm GalnAsP LD grown on directly bonded InP/Si substrate was successfully obtained. We have grown laser structure by MOVPE using InP/Si substrate, and fabricated broad area edge-emitted LD. For the preparation of InP/Si substrate, the temperature during direct bonding process was changed to 350, 400, and 450 °C. The electrical and lasing characteristics dependent on the bonding temperature were compared.

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直接键合InP/Si衬底生长1.5μΜ GalnAsP LD的激光特性

成功地获得了直接键合InP/Si衬底上生长的1.5μm GalnAsP LD随键合温度变化的激光特性。我们在InP/Si衬底上用MOVPE生长激光器结构，制备了大面积边缘发射LD。在制备InP/Si衬底时，将直接键合过程的温度改变为350℃、400℃和450℃。比较了焊接温度对电特性和激光特性的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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