The Region-Exhaustive Fault Model

A. Jas, S. Natarajan, S. Patil
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引用次数: 14

Abstract

Device failure mechanisms of today's deep sub-micron processes are not well-modeled by single stuck-at faults, and hence several advanced fault models have been proposed in the past. Gate-exhaustive fault models were proposed to exercise a gate completely and then observe the resultant response at an observable output. This paper extends the gate-exhaustive fault model to target bigger regions (a collection of gates) with the hypothesis that exercising a region with an exhaustive pattern set can yield coverage on a larger proportion of unmodeled defects. To test out this hypothesis, we use the logic proximity bridge (LPB) fault model as a surrogate for unmodeled defects and grade the region and gate exhaustive patterns against the LPB fault model to gauge their efficacy. We show that region exhaustive patterns are better at detecting untargeted LPB faults compared to patterns obtained using gate exhaustive or traditional stuck-at fault models.
区域穷举故障模型
当前深亚微米工艺的器件失效机制不能很好地用单个卡在故障来建模,因此过去已经提出了几种先进的故障模型。提出了门穷举故障模型,对一个门进行完整的测试,然后在可观测输出处观察结果响应。本文将门-穷举故障模型扩展到更大的区域(一个门的集合),并假设用穷举模式集对一个区域进行操作可以在更大比例的未建模缺陷上产生覆盖。为了验证这一假设,我们使用逻辑接近桥(LPB)故障模型作为未建模缺陷的代理,并根据LPB故障模型对区域和门穷举模式进行分级,以衡量它们的有效性。我们表明,与使用门穷举或传统的卡在故障模型获得的模式相比,区域穷举模式在检测非目标LPB故障方面更好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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