Photo assisted LPCVD TiN for deep submicron contacts using organo-titanium compound

Abstract

Work on forming high-quality TiN barrier layers by low-pressure chemical vapor deposition (LPCVD) in deep-submicron contacts is reported. A high-quality titanium nitride film was prepared by the photo-assisted LPCVD method using a new organo-titanium compound, Cp2Ti(N3)2, that does not contain chlorine atoms. The film exhibits sufficient barrier effect to withstand 450°C annealing as well as low resistivity, and adequate step coverage. This fabrication method can be used at lower deposition temperatures