Barrier height reconfiguration of graphene/ZnO:N barristor using ferroelectric polymer

Abstract

We demonstrate and explain the operation of PVDF-TrFE/graphene/ZnO:N barristor using electrostatic force microscopy (EFM) poling system. The device was successfully reconfigured using a ferroelectric polymer, PVDF-TrFE. ~103 of device current modulation were achieved. And, it will be very useful for dynamically reconfigurable logic, memory and logic-memory hybrid device applications.