Novel Flip-Chip Probing Methodology Using Electron Beam Probing

R. Jain, T. Malik, T. Lundquist, R. Schlangen, R. Leihkauf, U. Kerst, C. Boit
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引用次数: 3

Abstract

The measurement of timing and voltage signals inside integrated circuits (IC) is critical to debugging new devices, to failure analysis of advanced devices, validating new IP (intellectual property) in new silicon, etc. E-beam probing (EBP) has been very useful for front side devices for over two decades. For measuring signals below the top metal layers, probe pads are made using a focused ion beam (FIB) where lower metal was accessible. Increasing migration of ICs to flip chip packaging has necessitated the need for a new tool set or methodology for design debug and failure analysis. This paper introduces data taken from a flip chip using an IDS 10K+ E-beam Prober (EBPr). The samples are thinned using an Allied HiTech polishing wheel and the Credence OptiFIB. The investigation utilized the capability of the EBPr to acquire both repeating (clocks) and non-repeating signals at various: supply voltages, loop lengths frequencies.
利用电子束探测的新型倒装芯片探测方法
集成电路(IC)内部时序和电压信号的测量对于调试新设备,先进设备的故障分析,验证新硅中的新IP(知识产权)等至关重要。电子束探测(EBP)在近二十年来一直应用于前端器件。为了测量顶部金属层以下的信号,探头垫使用聚焦离子束(FIB)制成,其中较低的金属是可访问的。集成电路向倒装封装的迁移越来越多,因此需要一种新的工具集或方法来进行设计调试和故障分析。本文介绍了利用IDS 10K+电子束探针(EBPr)从倒装芯片上采集的数据。使用Allied HiTech抛光轮和Credence OptiFIB对样品进行稀释。调查利用EBPr的能力,以获取重复(时钟)和非重复信号在各种:电源电压,环路长度频率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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