{"title":"Well-Aligned Carbon Nanotubes for Device and Assembly Applications","authors":"L. Zhou, D. Hess, C. Wong","doi":"10.1109/ISAPM.2006.1666036","DOIUrl":null,"url":null,"abstract":"The remarkable properties of carbon nanotubes (CNTs) with ballistic electrical transport and ultra high thermal conductivity have made them very attractive for microelectronic interconnects, thermal management and nanoscale device applications. This seminar discusses our recently developed CVD growth of well-aligned CNT films/arrays, their characterizations and applications related to microelectronics packaging. However, the high CNT growth temperature (>600 degC) and poor substrate adhesion impede the CNT implementation in microelectronics. To circumvent these obstacles for a successful CNT application, we propose using a CNT transfer technology process. The process is featured with a separation of the CNT growth and CNT to device assembly, which is enabled by an in-situ formed open-ended CNT structures that we have recently developed. This technique is similar to a flip-chip process and is compatible with current microelectronic device fabrication sequences and surface mount component assembly technology. Field emission testing of the as-assembled CNT devices indicates good field emission characteristics, with a field enhancement factor of 4540. In addition, we also demonstrate the creation of hierarchic structures (micro and nano-scaled) by controlled growth of CNTs for lotus effect (superhydrophobic) surfaces coatings and its geometric design and optimization are discussed. Aligned CNT prototypes for thermal management and electrical interconnect are also illustrated","PeriodicalId":151960,"journal":{"name":"2006 11th International Symposium on Advanced Packaging Materials: Processes, Properties and Interface","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 11th International Symposium on Advanced Packaging Materials: Processes, Properties and Interface","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAPM.2006.1666036","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The remarkable properties of carbon nanotubes (CNTs) with ballistic electrical transport and ultra high thermal conductivity have made them very attractive for microelectronic interconnects, thermal management and nanoscale device applications. This seminar discusses our recently developed CVD growth of well-aligned CNT films/arrays, their characterizations and applications related to microelectronics packaging. However, the high CNT growth temperature (>600 degC) and poor substrate adhesion impede the CNT implementation in microelectronics. To circumvent these obstacles for a successful CNT application, we propose using a CNT transfer technology process. The process is featured with a separation of the CNT growth and CNT to device assembly, which is enabled by an in-situ formed open-ended CNT structures that we have recently developed. This technique is similar to a flip-chip process and is compatible with current microelectronic device fabrication sequences and surface mount component assembly technology. Field emission testing of the as-assembled CNT devices indicates good field emission characteristics, with a field enhancement factor of 4540. In addition, we also demonstrate the creation of hierarchic structures (micro and nano-scaled) by controlled growth of CNTs for lotus effect (superhydrophobic) surfaces coatings and its geometric design and optimization are discussed. Aligned CNT prototypes for thermal management and electrical interconnect are also illustrated