Well-Aligned Carbon Nanotubes for Device and Assembly Applications

L. Zhou, D. Hess, C. Wong
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Abstract

The remarkable properties of carbon nanotubes (CNTs) with ballistic electrical transport and ultra high thermal conductivity have made them very attractive for microelectronic interconnects, thermal management and nanoscale device applications. This seminar discusses our recently developed CVD growth of well-aligned CNT films/arrays, their characterizations and applications related to microelectronics packaging. However, the high CNT growth temperature (>600 degC) and poor substrate adhesion impede the CNT implementation in microelectronics. To circumvent these obstacles for a successful CNT application, we propose using a CNT transfer technology process. The process is featured with a separation of the CNT growth and CNT to device assembly, which is enabled by an in-situ formed open-ended CNT structures that we have recently developed. This technique is similar to a flip-chip process and is compatible with current microelectronic device fabrication sequences and surface mount component assembly technology. Field emission testing of the as-assembled CNT devices indicates good field emission characteristics, with a field enhancement factor of 4540. In addition, we also demonstrate the creation of hierarchic structures (micro and nano-scaled) by controlled growth of CNTs for lotus effect (superhydrophobic) surfaces coatings and its geometric design and optimization are discussed. Aligned CNT prototypes for thermal management and electrical interconnect are also illustrated
定向碳纳米管在器件和装配中的应用
碳纳米管(CNTs)具有弹道电输运和超高导热性的显著特性使其在微电子互连、热管理和纳米级器件应用中具有很大的吸引力。本次研讨会讨论了我们最近开发的CVD生长良好排列的碳纳米管薄膜/阵列,它们的特性和与微电子封装相关的应用。然而,碳纳米管生长温度高(>600℃)和衬底粘附性差阻碍了碳纳米管在微电子领域的实现。为了避免碳纳米管成功应用的这些障碍,我们建议使用碳纳米管转移技术过程。该工艺的特点是碳纳米管生长和碳纳米管到器件组装的分离,这是通过我们最近开发的原位形成的开放式碳纳米管结构实现的。该技术类似于倒装芯片工艺,并与当前的微电子器件制造工艺和表面贴装组件组装技术兼容。现场发射测试表明,组装后的碳纳米管器件具有良好的场发射特性,场增强系数为4540。此外,我们还展示了通过控制碳纳米管的生长来创建层级结构(微观和纳米尺度)的莲花效应(超疏水)表面涂层,并讨论了其几何设计和优化。对准碳纳米管原型热管理和电气互连也说明
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