Local thermal deformation and residual stress of a thin Si chip mounted on a substrate using an area-arrayed flip chip structure

H. Miura, N. Ueta, Y. Sato
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引用次数: 13

Abstract

Mechanical reliability issues such as cracking of LSI chips and deterioration of electronic performance of them caused by mechanical stress and strain in multi devices sub-assembly (MDS) structures were discussed analytically and experimentally. Local thermal deformation due to thinning of the LSI chips for mobile application causes large distribution of residual stress from -300 MPa to +150 MPa in the chips. The values of the maximum and the minimum stresses are strong function of the thickness of the LSI chips. In flip chip assembly structures, high tensile stress occurs near the edge of the back surface of the chips and at the edge of small bumps. High compressive stress remains in the center area of the thinner chips because of the reduction of their cross section. Such a wide range of the residual stress causes wide distribution of the shift of electronic performances of devices. Therefore, it is very important to optimize the MDS structures to improve the reliability of products.
采用面阵倒装晶片结构,安装在基板上的薄硅晶片的局部热变形和残余应力
对多器件子组件(MDS)结构中机械应力和应变引起的大规模集成电路芯片开裂和电子性能恶化等机械可靠性问题进行了分析和实验研究。由于移动应用的LSI芯片变薄导致局部热变形,导致芯片内残余应力分布较大,范围从-300 MPa到+150 MPa。最大和最小应力值与LSI芯片的厚度有很大关系。在倒装芯片组装结构中,高拉伸应力发生在芯片背面边缘和小凸起边缘附近。由于薄片截面的减小,高压应力仍然存在于薄片的中心区域。如此大范围的残余应力导致器件的电子性能变化分布广泛。因此,优化MDS结构以提高产品的可靠性是非常重要的。
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