AC NEGF Simulation of Nanosheet MOSFETs

Abstract

In this work, an AC nonequilibrium Green function (NEGF) simulation for nanosheet MOSFETs is presented. The AC NEGF equations are discretized using a decoupled mode-space approach for efficient implementation. The Poisson equation is solved self consistently to obtain the electrostatic potential. Our in-house device simulator, G-Device, is used to simulate the AC responses on nanosheet MOSFETs.