Variations in programmed phase defect size and its impact on defect detection signal intensity using at-wavelength inspection system

Tsuyoshi Amano, N. Takagi, Tsukasa Abe
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Abstract

A programmed phase defect Extreme Ultraviolet (EUV) mask was fabricated and measurement repeatability of the defect size using a scanning probe microscope (SPM) was evaluated. The SPM measurement results indicated that the defect size variation as registered by the measurement repeatability were much smaller than the defect-to-defect variations. It means the defect-to-defect variation in size actually does exist. Some defects were found where their sizes before a multilayer coating (on quartz) were all the same but after the coat their sizes varied quite significantly when observed on the multilayer. This result indicated that it is difficult to estimate the phase defect size on quartz, whereas they can be accurately measured on multilayer. Influences of the defect size variation on defect detection signal intensity (DSI) using an actinic blank inspection (ABI) system were examined; their influences on the wafer printability were also examined. The DSI was strongly correlated with defect depth on the multilayer, and it was also indicated that the ABI can detect small variations in defect sizes. It was also confirmed that the impact of the phase defects on wafer printed CDs were proportional to the DSIs, and that the ABI has a potential to detect phase defect that could cause 5 % of the CD error when printing 16 nm dense lines.
程序相位缺陷尺寸的变化及其对波长检测系统缺陷检测信号强度的影响
制备了程控相位缺陷极紫外(EUV)掩模,并对扫描探针显微镜(SPM)测量缺陷尺寸的可重复性进行了评价。SPM测量结果表明,通过测量可重复性记录的缺陷尺寸变化比缺陷到缺陷的变化要小得多。这意味着缺陷与缺陷之间的尺寸差异确实存在。有些缺陷在多层涂层前(石英上)的尺寸都是一样的,但在多层涂层上观察时,涂层后的尺寸变化很大。这一结果表明,石英表面的相缺陷尺寸难以估计,而多层表面的相缺陷尺寸可以精确测量。研究了缺陷尺寸变化对光化空白检测系统缺陷检测信号强度(DSI)的影响;研究了它们对晶圆印刷适性的影响。DSI与多层缺陷深度密切相关,也表明ABI可以检测到缺陷尺寸的微小变化。研究还证实了相位缺陷对晶圆印刷CD的影响与dsi成正比,并且ABI有可能检测到在印刷16 nm密集线时可能导致5% CD误差的相位缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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