Y. Toyoda, Hideaki Katakura, Takatoshi Ooe, M. Iwaya, H. Sumida
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引用次数: 3
Abstract
New 60V-class intelligent power switch (IPS) technology implementing a vertical trench MOSFET has been developed for automotive applications. We have realized the method to integrate a 60V-class vertical trench MOSFET with high voltage surge robustness and 5V- and 60V-class lateral planar MOSFETs on one chip. The integrated vertical trench MOSFET is designed by 0.35μm-rule in order to reduce its specific on-resistance (Ron·A). As a result, our integrated vertical trench MOSFET has the Ron·A below 0.6mΩ·cm2 which is about 40% Ron·A of the vertical planar MOSFET integrated in the conventional IPS. This paper reports our newly developed 60V-class power IC technology for the IPS.