A new procedure to extract ultra-low specific contact resistivity

Abstract

In this work, a new procedure to extract ultra-low specific contact resistivity down to 10-9 Ω-cm2 is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process.