An investigation into the nonquasistatic effects in MOS devices with on-wafer S-parameter techniques

Abstract

The high-frequency characteristics of MOS devices are investigated with a view to the identification of nonquasistatic (NQS) effects considering the Bagheri and Tsividis I-order NQS model as a reference. An exhaustive set of data is analyzed. It indicates the existence of NQS effects in long- as well as short-channel devices. Significant differences are observed between a charge based quasi-static model and measurements for a long-channel (25- mu m) device. A deembedding technique is suggested to observe the intrinsic device behavior up to a higher range of frequencies.<>