Challenges and approaches of ultra-fine pitch Cu pillar assembly on organic substrate using wafer level underfill

S. Lim, L. Siow, T. Chai, V. S. Rao, K. Takeda, T. Enami, C. G. Koh, XiangFeng Wang, Hongqi Sun, T. Ando
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引用次数: 1

Abstract

The use of flip-chip technology in packaging interconnects is becoming more important due to its better electrical performance, smaller form factor packages, and higher interconnect density than wire bonded packages. Flip-chip soldering has been the mainstream flip-chip technology. However, the move towards fine pitch Cu pillar flip chip packaging with fine pad bond pitch has driven the investigation of Sn plated bumps on Cu pillar encapsulated with wafer level underfill as a potential alternative [1]. As the pitch of the electrical interconnections decreases and chip size increases, it is more difficult to develop high through-put processes using conventional capillary flow underfills. A WLUF process eliminates the time required to dispense conventional underfill to every chip and for capillary flow [2]. Fillers are used in underfill materials to decrease the coefficient of thermal expansion (CTE) which has the effect of reducing package stresses, and helping to achieve better reliability performance. However, in the case of WLUF with high filler content, it is very challenging to achieve 100% electrically and metallurgically good Pb-free solder joints and void-free underfill as the epoxy based WLUF can cure early, below the Pb-free solder melting temperature, and become trapped between flip chip bumps and substrate solder pads. Also, the high process temperature of Pb-free solder can cause a large amount of voids to form within the WLUF material during the solder joining cycle [3-4]. In the paper, a WLNCF with 40% fillers was laminated onto 8 inch wafer containing Cu pillar post with Sn solder bumps by spin coating. The wafer was diced into chips. A chip was aligned and joined to a substrate with an optimized heating and cooling cycle. The effects of the bonding parameters and bonding temperature profile on the fine pitch flip chip assembly on solder wetting, solder joint shape and WLNCF voids are addressed in this paper. The main challenge for the fine pitch flip chip assembly was to assemble a fine pitch Cu pillar assembly onto an organic substrate while ensuring good solder wetting, good bonding placement accuracy, minimum solder joint voids, good fillet coverage and no wafer level underfill trapped between the solder and substrate bond pad after thermocompression bonding. In addition, wafer level underfill lamination uniformity and voids after lamination and B-stage cure were inspected. Wafer dicing evaluation was also performed to ensure no debris or particles adhering to the WL-NCF during dicing. No peeling or delamination of the WL-NCF was observed after dicing. The impact of these various factors on the stacked die assembly is discussed in this paper.
采用晶圆级底填法在有机衬底上组装超细间距铜柱的挑战与方法
在封装互连中使用倒装芯片技术正变得越来越重要,因为它具有更好的电气性能,更小的外形尺寸封装,以及比线键封装更高的互连密度。倒装芯片焊接一直是倒装芯片的主流技术。然而,随着细间距铜柱倒装芯片封装技术的发展,在铜柱上镀锡的凸点被封装成圆片级的下填料,作为一种潜在的替代方案。随着电气互连间距的减小和芯片尺寸的增大,采用传统的毛细管流下充填技术开发高通量工艺变得更加困难。WLUF工艺消除了将常规底填料分配到每个芯片和毛细管流动[2]所需的时间。在底填材料中使用填料可以降低热膨胀系数(CTE),从而降低封装应力,并有助于获得更好的可靠性性能。然而,对于填料含量高的WLUF来说,要实现100%的电气和冶金性能良好的无铅焊点和无空隙底填料是非常具有挑战性的,因为环氧基WLUF可以在低于无铅焊料熔化温度的情况下早期固化,并且会被夹在反转芯片凸起和衬底焊盘之间。此外,无铅焊料的高工艺温度会在焊接周期中导致WLUF材料内部形成大量空隙[3-4]。本文采用旋转镀膜的方法,将填充量为40%的WLNCF层压在8英寸的含锡锡凸点的铜柱晶圆上。薄片被切成薄片。通过优化的加热和冷却循环,将芯片对准并连接到基板上。本文讨论了细间距倒装芯片的焊接参数和焊接温度分布对焊料润湿、焊点形状和WLNCF空隙的影响。细间距倒装芯片组装的主要挑战是将细间距铜柱组装到有机基板上,同时确保良好的焊料润湿性、良好的键合放置精度、最小的焊点空隙、良好的圆角覆盖以及热压键合后焊料和基板键合垫之间没有晶圆级的下填充物。此外,还考察了片级衬底层合均匀性和层合及b级固化后的空隙率。还进行了薄片切割评估,以确保切割过程中没有碎屑或颗粒粘附在WL-NCF上。切丁后未见WL-NCF脱皮或分层。本文讨论了这些因素对叠模装配的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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