Channel-width measurements of LOCOS- and trench-isolated n-MOSFETs by photoemission

Abstract

A simple, accurate, and nondestructive method for measuring the channel width of a processed n-MOSFET by using a high-resolution photoemission microscope is proposed. It is confirmed for test devices with local application of silicon (LOCOS) and trench isolation that the method can be applicable to n-MOSFETs with submicron channel width.<>