Bulk and contact 1/f noise in GaN TLM structures

Abstract

We measure the contact resistance and 1/f noise on n-type GaN samples grown by various vapour phase epitaxy (VPE) technologies. Contacts are made in a linear transmission line geometry (TLM). In some samples the metal semiconductor contact noise dominates. This 1/f noise spans over 4 decades. In other samples the bulk noise dominates. This 1/f noise is described by the empirical relation