High-performance Silicon-On-Glass VDMOS Transistor for RF-Power Applications

Abstract

A complete analysis of DC and RF performance of a novel SOI vertical DMOS transistor on glass and a conventional LDMOS transistor for RF power applications is presented. The analysis is based on MEDICI device simulations and the ”Smoothie” database model for FET devices. An SOI VDMOST on glass with a breakdown of 115V, a specific on-resistance RONSP of 3mΩcm 2 ,a n fTmax of 7.4 GHz at VDS=26V and a saturation current of 1.25·10 �4 A/µ ma t VDS=10V is demonstrated. A device with 1mm long gate has PAE of 43% and power gain of 18.5 dB with 1dB compression point at POUT=26dBm. Since this SOI VDMOS device shows better linearity and higher power gain compared to conventional LDMOST, it would be the device of choice for RF power applications. Moreover, silicon-on-glass technology offers integration with high quality passives and the possibility to electroplate copper heat sinks only a few microns away from the active device area. Both features are very important for development of integrated power amplifiers.