A direct extraction algorithm for a submicron MOS transistor model

Abstract

A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control.<>