H. Chiu, T. Lin, P. Chang, W. Lee, C. Chiang, J. Kwo, Y. Lin, S. Hsu, W. Tsai, M. Hong
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引用次数: 6
Abstract
Self-aligned inversion-channel In0.53Ga0.47As n-MOSFETs with ex-situ atomic-layer-deposited Al2O3 and in-situ ultra-high-vacuum deposited Al2O3/Ga2O3(Gd2O3) as gate dielectrics have been demonstrated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. In addition, RF characteristics of both devices were analyzed; without using any isolation, non de-embedded current gain cutoff frequency (fT) and maximum oscillation frequency (fmax) of ∼ 3.1 and 1.1 GHz (ALD-Al2O3) and of ∼ 17.9 and 11.2 GHz (MBE-Al2O3/Ga2O3(Gd2O3)), respectively, have been obtained.
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