Green laser annealing with light absorber

Abstract

To compensate deep penetration depth of green laser light into Si, metal absorber was formed on a specimen. TiN absorber was effective to reduce necessary laser energy density to activate dopant, however Mo worked oppositely. In addition, specimens with the absorber encountered the problem of over-melt that increased junction depth severely. Mechanisms of these results were discussed utilizing one-dimensional thermal diffusion analysis. Absence of reflectivity reduction was considered to be the key of this phenomenon