Effect of Ag grain size on high temperature joint formation in Ag-In system

Pin J. Wang, Chu-Hsuan Sha, Chin C. Lee
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Abstract

After many experiments in developing fluxless Ag-In joints, we realize that the success of producing a joint relates to microstructure of the Ag layer. Ag with small grains results in rapid growth of solid Ag2In intermetallic compounds through grain boundary diffusion. Thus, a joint is not obtained because of lack of molten phase, (L). To coarsen Ag grains, an annealing step is added to the Ag-plated Cu substrate. This step makes Ag grains 200 times coarser compared to the as-plated Ag. The coarsened microstructure slows down the Ag2In growth. Consequently, the (L) phase stays at molten state with sufficient time to react with the Ag layer on Si chip to produce a joint. Nearly perfect joints are produced on Ag-plated Cu substrates. The resulting joints consist of pure Ag, Ag-rich solid solution, Ag2In, and Ag3In. The melting temperature exceeds 650°C. Using the present process, high temperature joints of high thermal conductivity are made between Si chips and Cu substrates at low bonding temperature (200°C). We foresee the Ag-In system as an important system to explore for various fluxless bonding applications. This system provides the possibilities of producing joints of wide composition choices and wide melting temperature range. Present study provides preliminary but useful information on how the microstructure of Ag affects the bonding results.
银晶粒尺寸对银-银体系高温节理形成的影响
经过多次研制无焊剂银银接头的试验,我们认识到接头的成功生产与银层的显微组织有关。晶粒小的Ag通过晶界扩散导致固体Ag2In金属间化合物的快速生长。因此,由于缺乏熔融相(L),没有得到连接。为了使Ag晶粒粗化,在镀银的Cu衬底上添加了退火步骤。这一步骤使银颗粒比镀银时粗200倍。粗化组织减缓了Ag2In的生长。因此,(L)相保持熔融状态,有足够的时间与硅片上的银层发生反应,形成接头。在镀银铜基板上产生了近乎完美的接头。所得接头由纯银、富银固溶体、Ag2In和Ag3In组成。熔化温度超过650℃。采用本工艺,可以在低键合温度(200℃)下,在Si芯片和Cu衬底之间制作高导热性的高温接头。我们预见银银体系将成为探索各种无熔剂键合应用的重要体系。该系统提供了生产广泛成分选择和广泛熔化温度范围的接头的可能性。目前的研究为银的微观结构如何影响键合结果提供了初步但有用的信息。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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