High aspect ratio InGaAs FinFETs with sub-20 nm fin width

Abstract

We demonstrate self-aligned InGaAs FinFETs with sub-20 nm fin width fabricated through a CMOS compatible front-end process. Working devices with fins as narrow as 7 nm, fin aspect ratios in excess of 5 and gate lengths as short as 20 nm have been fabricated using precision dry etching and digital etch. The devices also feature self-aligned metal contacts that are 20-30 nm away from the edge of the gate. FinFETs with Lg=30 nm, Wf=22 nm and channel height of 40 nm exhibit a transconductance of 1400 μS/μm at VDS=0.5 V. When normalized to Wf, this is a record value among all III-V FinFETs, indicating that our device architecture makes efficient use of conduction along the fin sidewalls.