Demonstration of an electrically functional 34 nm metal pitch interconnect in ultralow-k ILD using spacer-based pitch quartering

Abstract

The patterning of a 34 nm metal pitch interconnect was realized using a spacer-based pitch quartering scheme. The pattern is transferred into an ultralow-k ILD using a process that avoids ILD buckling and structure collapse. Resulting features were metallized with copper, and electrically characterized. Measurement results show expected trends with drawn dimensions.