Deuterium process of CMOS devices: new phenomena and dramatic improvement

Abstract

When CMOS devices were annealed in D/sub 2/ in instead of H/sub 2/, the slope, n, of the degradation power law is smaller than that for the H/sub 2/ processed devices. At higher process temperature (480/spl deg/C), the power index, n, becomes voltage dependent. This results in dramatic enhancement of life time (over 10/sup 6/ times). 10-30% higher channel electrical field can be applied to the D/sub 2/ annealed devices.