{"title":"Accurate thermal analysis considering nonlinear thermal conductivity","authors":"Anand Ramalingam, D. Pan, Frank Liu, S. Nassif","doi":"10.1109/ISQED.2006.20","DOIUrl":null,"url":null,"abstract":"The increase in packing density has led to a higher power density in the chip which in turn has led to an increase in temperature on the chip. Temperature affects reliability, performance and power directly, motivating the need to accurately simulate the thermal profile of a chip. In literature, thermal conductivity is assumed to be a constant in order to obtain a linear system of equations which can be solved efficiently. But thermal conductivity is a nonlinear function of temperature and for silicon it varies by 22% over the range 27-80deg C (McConnell et al., 2001). If the nonlinearity of the thermal conductivity is ignored the thermal profile might be off by 10deg C. Thus to get an accurate thermal profile it is important to consider the nonlinear dependence of the thermal conductivity on temperature. In this work the nonlinear system arising out of considering the nonlinear thermal conductivity is solved efficiently using a variant of Newton-Raphson. We also study the abstraction levels under which the approximation of a periodic source by a DC source is valid","PeriodicalId":138839,"journal":{"name":"7th International Symposium on Quality Electronic Design (ISQED'06)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"7th International Symposium on Quality Electronic Design (ISQED'06)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2006.20","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The increase in packing density has led to a higher power density in the chip which in turn has led to an increase in temperature on the chip. Temperature affects reliability, performance and power directly, motivating the need to accurately simulate the thermal profile of a chip. In literature, thermal conductivity is assumed to be a constant in order to obtain a linear system of equations which can be solved efficiently. But thermal conductivity is a nonlinear function of temperature and for silicon it varies by 22% over the range 27-80deg C (McConnell et al., 2001). If the nonlinearity of the thermal conductivity is ignored the thermal profile might be off by 10deg C. Thus to get an accurate thermal profile it is important to consider the nonlinear dependence of the thermal conductivity on temperature. In this work the nonlinear system arising out of considering the nonlinear thermal conductivity is solved efficiently using a variant of Newton-Raphson. We also study the abstraction levels under which the approximation of a periodic source by a DC source is valid
封装密度的增加导致芯片中更高的功率密度,从而导致芯片上温度的增加。温度直接影响可靠性、性能和功率,因此需要精确模拟芯片的热分布。在文献中,导热系数被假定为一个常数,以便得到一个可以有效求解的线性方程组。但导热系数是温度的非线性函数,硅的导热系数在27-80℃范围内变化22% (McConnell et al., 2001)。如果忽略导热系数的非线性,则热廓线可能会偏离10℃。因此,为了得到准确的热廓线,考虑导热系数对温度的非线性依赖是很重要的。在本文中,由于考虑了非线性导热系数而引起的非线性系统,采用牛顿-拉夫逊的一种变体有效地求解了非线性系统。我们还研究了在哪些抽象层次下直流源对周期源的近似是有效的