Successful Development of 1.2 kV 4H-SiC MOSFETs with the Very Low On-Resistance of 5 mΩcm2

Abstract

4H-SiC MOSFETs comprised of a miniaturized unit cell structure were fabricated. The epilayer channel configuration was employed to effectively improve the MOSFET electrical characteristics. A specific on-resistance of 5 mOmegacm2 with a stable avalanche breakdown of 1.35 kV was successfully recorded. Temperature dependence of the Ron,sp examined and the Ron,sp exhibited still low value of 8.5 mOmegacm2 at 150 degC . The SiC-MOSFETs were put together with SiC-SBDs to realize prototype SiC power modules. A switching energy loss was significantly reduced by employing the SiC module in comparison with a Si-IGBT/Si-FWD module. A three-phase inverter circuit consisted of the SiC module was assembled and stably drove a 3.7 kW/400 V induction motor