{"title":"RECEST: a reverse channel emitter switched thyristor","authors":"A. Bhalla, T. Chow, K. So","doi":"10.1109/ISPSD.1995.515003","DOIUrl":null,"url":null,"abstract":"A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.","PeriodicalId":200109,"journal":{"name":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1995.515003","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
A 550 V, reverse channel emitter switched thyristor (RECEST) is demonstrated. It offers ease of thyristor turn-on, a low on-state drop, excellent parasitic thyristor latch-up immunity and a high maximum controllable current density. It is shown to have characteristics superior to both the conventional emitter switched thyristor and the dual lateral channel emitter switched thyristor, and shows promise for use in high-voltage applications.