Built-in current sensor for IDDQ testing in deep submicron CMOS

T. Calin, L. Anghel, M. Nicolaidis
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引用次数: 11

Abstract

This paper describes results on Built-In Current Sensors (BICS) destined to overcome the limitations of I/sub DDQ/ testing in deep submicron circuits. The problems of performance penalty, test accuracy and test speed are addressed. A new sensor composed of a source-controlled comparator operating at low supply voltages and bias currents is used. Gradual sensor activation ensures reliable low noise operation. It is combined with large bypass MOS switches avoiding performance penalty, as well as a second bypass and compensation logic to increase test speed.
内置电流传感器在深亚微米CMOS IDDQ测试
本文介绍了旨在克服深亚微米电路中I/sub DDQ/测试限制的内置电流传感器(BICS)的研究结果。解决了性能损失、测试精度和测试速度等问题。采用了一种由源控比较器组成的新型传感器,该传感器在低电源电压和偏置电流下工作。逐步激活传感器,确保可靠的低噪音运行。它与大旁路MOS开关相结合,避免了性能损失,以及第二旁路和补偿逻辑,以提高测试速度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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