Techniques for EM Fault Injection: Equipments and Experimental Results

P. Maurine
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引用次数: 40

Abstract

This paper will show that EM backside injection (case of flip chip bga packages) has little or no interest. Indeed, a new fault injection technique, called Forward Body Biaising Injection (FBBI), must be preferred to EM injection to produce transient faults, especially when LASER shots are detected by the target. The equipment required to apply a FBBI is low cost and really similar to the one used to produce an EM pulse. It is shown in 3. The main difference is the replacement of the coil producing the magnetic field by a thin tungsten rod in order to directly establish an electrical contact with the substrate. With such a direct contact (instead of a magnetic coupling), the fault can be produced with a low amplitude pulse generator. Additionally, the spatial resolution is expected to be better than with an EM pulse. The two electrical behaviors underlying this simple technique will be described before giving some experimental results obtained on a CRT based RSA, running on a secure device featuring a modular arithmetic co-processor.
电磁断层注入技术:设备与实验结果
本文将表明,EM背面注入(倒装芯片bga封装的情况下)很少或没有兴趣。事实上,一种新的断层注入技术,称为前向体偏向注入(FBBI),必须优先于电磁注入来产生瞬态断层,特别是当目标检测到激光射击时。应用FBBI所需的设备成本低,与用于产生电磁脉冲的设备非常相似。如图3所示。主要的区别是用细钨棒代替产生磁场的线圈,以便直接与基板建立电接触。有了这样的直接接触(而不是磁耦合),故障可以用低幅度脉冲发生器产生。此外,空间分辨率有望比EM脉冲更好。在给出基于CRT的RSA上的一些实验结果之前,将描述这种简单技术的两种电行为,这些实验结果运行在具有模块化算术协处理器的安全设备上。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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