High-performance CMOS fabricated on ultrathin BESOI with sub-10 nm ttv

Abstract

Ultra thin Bond and Etch-back Silicon On Insulator (BESOI) in the thickness range of 75 to 100 nn offers the potential for performance enhancement in both CMOS and BiCMOS technology. To be useful, however, a very low total thickness variation (ttv) is desirable, typically below 10 nm. SIMOX can obtain high uniformity, but has high residual defect densities. Recently, a plasma-based thinning process has been able to demonstrate impressive results in thinning conventional bonded SOI wafers to ultra thin high ttv dimensions.<>