{"title":"A practical method for extracting impurity profiles and effective mobilities of MOSFET's with nonuniform channel doping","authors":"K. Kubota, Y. Kawashima, Y. Ohkura, M. Nagao","doi":"10.1109/ICMTS.1990.67872","DOIUrl":null,"url":null,"abstract":"Complete profiling of channel impurity concentration up to the surface is presented using Gaussians whose parameters are determined, giving optimum fits to the measured capacitance voltage (C-V) profiles. A rectangular capacitor with a large aspect ratio is found to be effective in reducing series resistance for accurate (C-V) measurements at high frequencies. Effective mobilities are extracted from practical MOSFETs based on numerical analysis of the field effects using the obtained profiles and compared to those for uniform doping.<<ETX>>","PeriodicalId":196449,"journal":{"name":"International Conference on Microelectronic Test Structures","volume":"3 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.67872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Complete profiling of channel impurity concentration up to the surface is presented using Gaussians whose parameters are determined, giving optimum fits to the measured capacitance voltage (C-V) profiles. A rectangular capacitor with a large aspect ratio is found to be effective in reducing series resistance for accurate (C-V) measurements at high frequencies. Effective mobilities are extracted from practical MOSFETs based on numerical analysis of the field effects using the obtained profiles and compared to those for uniform doping.<>