A practical method for extracting impurity profiles and effective mobilities of MOSFET's with nonuniform channel doping

K. Kubota, Y. Kawashima, Y. Ohkura, M. Nagao
{"title":"A practical method for extracting impurity profiles and effective mobilities of MOSFET's with nonuniform channel doping","authors":"K. Kubota, Y. Kawashima, Y. Ohkura, M. Nagao","doi":"10.1109/ICMTS.1990.67872","DOIUrl":null,"url":null,"abstract":"Complete profiling of channel impurity concentration up to the surface is presented using Gaussians whose parameters are determined, giving optimum fits to the measured capacitance voltage (C-V) profiles. A rectangular capacitor with a large aspect ratio is found to be effective in reducing series resistance for accurate (C-V) measurements at high frequencies. Effective mobilities are extracted from practical MOSFETs based on numerical analysis of the field effects using the obtained profiles and compared to those for uniform doping.<<ETX>>","PeriodicalId":196449,"journal":{"name":"International Conference on Microelectronic Test Structures","volume":"3 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1990.67872","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Complete profiling of channel impurity concentration up to the surface is presented using Gaussians whose parameters are determined, giving optimum fits to the measured capacitance voltage (C-V) profiles. A rectangular capacitor with a large aspect ratio is found to be effective in reducing series resistance for accurate (C-V) measurements at high frequencies. Effective mobilities are extracted from practical MOSFETs based on numerical analysis of the field effects using the obtained profiles and compared to those for uniform doping.<>
一种提取非均匀沟道掺杂MOSFET的杂质分布和有效迁移率的实用方法
通道杂质浓度到表面的完整剖面是使用高斯分布,其参数被确定,给出最佳拟合测量电容电压(C-V)剖面。具有大宽高比的矩形电容器被发现可以有效地降低高频精确(C-V)测量的串联电阻。利用得到的场效应曲线对实际的mosfet进行了数值分析,并与均匀掺杂的场效应进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信