Failure Mechanisms of AIN based RF-MEMS Switches Under DC and ESD Stresses

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378070

J. Ruan, N. Nolhier, M. Bafleur, L. Bary, N. Mauran, F. Coccetti, T. Lisec, R. Plana

引用次数: 0

Abstract

Today, we report only one paper concerning this issue and we believe that it deserves to go deeper in detail concerning the physic of failure related to ESD stresses. The second part of this paper is devoted to the reliability investigation of AIN-based capacitive switches under ESD stresses.

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基于AIN的RF-MEMS开关在直流和ESD应力下的失效机理

今天，我们只报道了一篇关于这个问题的论文，我们认为值得对与ESD应力相关的失效物理进行更深入的详细研究。本文的第二部分研究了基于ai的电容开关在ESD应力作用下的可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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