J. van der Pol, A. Ludikhuize, H.G.A. Huizing, B. van Velzen, R. Hueting, J.F. Mom, G. van Lijnschoten, G. Hessels, E.F. Hooghoudt, R. van Huizen, M. Swanenberg, J. Egbers, F. van den Elshout, J. Koning, H. Schligtenhorst, J. Soeteman
{"title":"A-BCD: An economic 100 V RESURF silicon-on-insulator BCD technology for consumer and automotive applications","authors":"J. van der Pol, A. Ludikhuize, H.G.A. Huizing, B. van Velzen, R. Hueting, J.F. Mom, G. van Lijnschoten, G. Hessels, E.F. Hooghoudt, R. van Huizen, M. Swanenberg, J. Egbers, F. van den Elshout, J. Koning, H. Schligtenhorst, J. Soeteman","doi":"10.1109/ISPSD.2000.856836","DOIUrl":null,"url":null,"abstract":"A-BCD is a family of 100 V BCD processes on SOI offering latchup free operation, improved robustness, superior EMC performance, higher packing density, lower mask count, high temperature and higher frequency operation and easier design over bulk silicon technology. A wide range of a passive and active (5/12/25/60 and 100 V) devices are available. Device design tradeoffs for n- and p-type LDMOS and extended drain PMOS are discussed in detail. This and the low mask count makes it a versatile process for cost-sensitive consumer and automotive markets.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"186 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"58","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856836","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 58
Abstract
A-BCD is a family of 100 V BCD processes on SOI offering latchup free operation, improved robustness, superior EMC performance, higher packing density, lower mask count, high temperature and higher frequency operation and easier design over bulk silicon technology. A wide range of a passive and active (5/12/25/60 and 100 V) devices are available. Device design tradeoffs for n- and p-type LDMOS and extended drain PMOS are discussed in detail. This and the low mask count makes it a versatile process for cost-sensitive consumer and automotive markets.
a -BCD是SOI上的100 V BCD工艺系列,提供无锁紧操作、改进的鲁棒性、卓越的EMC性能、更高的封装密度、更低的掩模计数、高温和更高频率的操作以及比散装硅技术更容易的设计。广泛的无源和有源(5/12/25/60和100v)器件可用。详细讨论了n型和p型LDMOS和扩展漏极PMOS的器件设计权衡。这一点和低掩模计数使其成为对成本敏感的消费者和汽车市场的通用工艺。