6-3 Benchmarking Charge Trapping Models with NBTI, TDDS and RTN Experiments

Abstract

A systematic review and comparison of existing charge trapping models in literature is performed. A framework for simulating hole trapping/de-trapping kinetics is established to compute resultant threshold voltage degradation ($\Delta \mathrm{V}_{\mathrm{HT}})$ and capture-emission time constants ($\tau_{C}-\tau_{E}$). The models are analyzed by using data from Negative Bias Temperature Instability (NBTI), Random Telegraph Noise (RTN) and Time Dependent Defect Spectroscopy (TDDS) experiments.