Analysis of 4500 V double trench MOS controlled thyristor

Abstract

Novel high voltage MOS controlled thyristor (MCT) structures are proposed and analysed. It was found that the double trench MCT(DTMCT) increases the turn-off capability by a factor of 4 and reduces the turn-off loss by a factor of 5 compared with single trench gate MCT(TMCT) while both have a forward blocking voltage of 4500 V. These results, combined with the excellent forward current carrying capability provided by thyristor operation, are encouraging for the DTMCT to be developed for very high voltage low loss applications.