The Optimized Monolithic Fault Protection Circuit for the Soft-shutdown behavior of 600V PT-IGBT by employing a New Blanking Filter

I. Ji, Young-Hwan Choi, Soo-Seong Kim, Kwang-Hoon Oh, M. Han
{"title":"The Optimized Monolithic Fault Protection Circuit for the Soft-shutdown behavior of 600V PT-IGBT by employing a New Blanking Filter","authors":"I. Ji, Young-Hwan Choi, Soo-Seong Kim, Kwang-Hoon Oh, M. Han","doi":"10.1109/ISPSD.2006.1666103","DOIUrl":null,"url":null,"abstract":"We have proposed an optimization method of fault protection circuit, which uses the floating p-well voltage detection, of IGBT by employing a novel blanking filter. The floating p-well capacitor and gate resistor, which filter the false detection during the normal switching period, cause the pull-down MOSFET to lower the gate voltage of the IGBT softly. The experimental results show the soft-shutdown behavior of the IGBT with the optimized protection circuit during the fault condition. We have also investigated the switching characteristics by using the measurement and 2-dimensional numerical simulation","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2006.1666103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We have proposed an optimization method of fault protection circuit, which uses the floating p-well voltage detection, of IGBT by employing a novel blanking filter. The floating p-well capacitor and gate resistor, which filter the false detection during the normal switching period, cause the pull-down MOSFET to lower the gate voltage of the IGBT softly. The experimental results show the soft-shutdown behavior of the IGBT with the optimized protection circuit during the fault condition. We have also investigated the switching characteristics by using the measurement and 2-dimensional numerical simulation
采用新型消隐滤波器优化的600V PT-IGBT单片故障保护电路的软关机行为
提出了一种利用IGBT浮p阱电压检测的故障保护电路优化方法,该方法采用了一种新型的消隐滤波器。浮动p阱电容和栅极电阻在正常开关期间滤除误检,使下拉MOSFET柔和地降低IGBT的栅极电压。实验结果表明,优化后的IGBT保护电路在故障状态下具有良好的软关机性能。我们还通过测量和二维数值模拟研究了开关特性
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信