I. Ji, Young-Hwan Choi, Soo-Seong Kim, Kwang-Hoon Oh, M. Han
{"title":"The Optimized Monolithic Fault Protection Circuit for the Soft-shutdown behavior of 600V PT-IGBT by employing a New Blanking Filter","authors":"I. Ji, Young-Hwan Choi, Soo-Seong Kim, Kwang-Hoon Oh, M. Han","doi":"10.1109/ISPSD.2006.1666103","DOIUrl":null,"url":null,"abstract":"We have proposed an optimization method of fault protection circuit, which uses the floating p-well voltage detection, of IGBT by employing a novel blanking filter. The floating p-well capacitor and gate resistor, which filter the false detection during the normal switching period, cause the pull-down MOSFET to lower the gate voltage of the IGBT softly. The experimental results show the soft-shutdown behavior of the IGBT with the optimized protection circuit during the fault condition. We have also investigated the switching characteristics by using the measurement and 2-dimensional numerical simulation","PeriodicalId":198443,"journal":{"name":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Symposium on Power Semiconductor Devices and IC's","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2006.1666103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have proposed an optimization method of fault protection circuit, which uses the floating p-well voltage detection, of IGBT by employing a novel blanking filter. The floating p-well capacitor and gate resistor, which filter the false detection during the normal switching period, cause the pull-down MOSFET to lower the gate voltage of the IGBT softly. The experimental results show the soft-shutdown behavior of the IGBT with the optimized protection circuit during the fault condition. We have also investigated the switching characteristics by using the measurement and 2-dimensional numerical simulation