EBIC Investigations on Active Polymer Devices

A. Pugatschow, R. Heiderhoff, M. Forster, U. Scherf, L. Balk
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引用次数: 1

Abstract

For the first time, EBIC microscopy is applied for investigations on active polymer devices, OFETs with TPA-Dimethyl and P3HT polymers as active layers. The internal electrical field distributions of these devices are characterized in dependence on biasing conditions. Poole-Frenkel field dependences at source and drain contacts are demonstrated.
有源聚合物器件的EBIC研究
EBIC显微镜首次应用于活性聚合物器件的研究,以tpa -二甲基和P3HT聚合物为活性层的ofet。这些器件的内部电场分布与偏置条件有关。证明了源和漏接点的普尔-弗兰克尔场依赖关系。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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