A robust finite element vector formulation of the semiconductor drift-diffusion equations incorporating anisotropic transport properties

Abstract

In this paper, a new finite element vector formulation of the drift-diffusion model, including anisotropic effects, is introduced. Stability criteria for the model are described and a methodology is presented for providing stable solutions for spatial discretisations that include both acute and obtuse triangles, including cases where there is a large stretching of the element.