H. Yu, M. Schaekers, A. Hikavyy, E. Rosseel, A. Peter, K. Hollar, F. Khaja, W. Aderhold, L. Date, A. Mayur, J. lee, K. Shin, B. Douhard, S. Chew, S. Demuynck, S. Kubicek, D. Kim, A. Mocuta, K. Barla, N. Horiguchi, N. Collaert, A. Thean, K. De Meyer
{"title":"Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation","authors":"H. Yu, M. Schaekers, A. Hikavyy, E. Rosseel, A. Peter, K. Hollar, F. Khaja, W. Aderhold, L. Date, A. Mayur, J. lee, K. Shin, B. Douhard, S. Chew, S. Demuynck, S. Kubicek, D. Kim, A. Mocuta, K. Barla, N. Horiguchi, N. Collaert, A. Thean, K. De Meyer","doi":"10.1109/VLSIT.2016.7573381","DOIUrl":null,"url":null,"abstract":"Following the previous study on Si:P [1], we also achieve ultralow contact resistivities (ρ<sub>c</sub>) of ~2×10<sup>-9</sup> Ω·cm<sup>2</sup> on Si<sub>0.3</sub>Ge<sub>0.7</sub>:B using the same Ti based pre-contact amorphization (PCAI) plus post-metal anneal (PMA) technique. Similar as on Si:P, low-energy PCAI provides the lowest ρ<sub>c</sub> on SiGe:B. By increasing the B concentration, the PMA temperature required on SiGe:B also matches with that on Si:P. A simple Ti based CMOS contact flow is thus proposed. Several B doping and activation methods on SiGe:B are also compared in this work.","PeriodicalId":129300,"journal":{"name":"2016 IEEE Symposium on VLSI Technology","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2016.7573381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
Abstract
Following the previous study on Si:P [1], we also achieve ultralow contact resistivities (ρc) of ~2×10-9 Ω·cm2 on Si0.3Ge0.7:B using the same Ti based pre-contact amorphization (PCAI) plus post-metal anneal (PMA) technique. Similar as on Si:P, low-energy PCAI provides the lowest ρc on SiGe:B. By increasing the B concentration, the PMA temperature required on SiGe:B also matches with that on Si:P. A simple Ti based CMOS contact flow is thus proposed. Several B doping and activation methods on SiGe:B are also compared in this work.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
