Architectural-level error-tolerant techniques for low supply voltage cache operation

Shih-Lien Lu, Alaa R. Alameldeen, K. Bowman, Zeshan A. Chishti, C. Wilkerson, Wei Wu
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引用次数: 8

Abstract

Supply voltage (VCC) scaling is the most effective technique for reducing the energy consumption of microprocessors. Since VCC scaling increases the impact of parameter variations on circuit performance and functionality, circuits eventually fall out of specification, thus limiting the minimum operating supply voltage (VCCMIN) for the microprocessor. The last-level cache (LLC) often determines VCCMIN. To maximize cache capacity, the LLC memory cell consists of near minimum-sized transistors, which are highly sensitive to process variations. For a tradition LLC, a small fraction of memory cells with large variations limit the VCCMIN for the entire microprocessor. In this paper, error-tolerant techniques dynamically reconfigure the cache to either disable or correct these failing memory cells to enable a lower VCCMIN at the cost of lower cache capacity, thus enhancing the microprocessor energy efficiency. At the high-VCC operating mode, the cache operates at full capacity to satisfy the high-performance target. At the low-VCC operating mode, energy consumption is the primary concern, and the cache is dynamically reconfigured with lower capacity to mitigate the impact of the failing memory cells on reliability. Since the clock frequency significantly reduces for the low-VCC mode as compared to the high-VCC mode, the reduction in cache capacity has a smaller effect on performance. In comparison to a traditional LLC design, simulation results indicate that the error-tolerant cache techniques decrease VCCMIN by 13–28%, corresponding to a 20–42% reduction in energy per instruction. Adding these techniques only incurs a 5–10% performance penalty at the low-VCC operating mode in comparison with a hypothetical idea cache.
低电压缓存操作的架构级容错技术
电源电压(VCC)缩放是降低微处理器能耗的最有效技术。由于VCC缩放增加了参数变化对电路性能和功能的影响,电路最终会超出规格,从而限制了微处理器的最小工作电源电压(VCCMIN)。最后一级缓存(LLC)通常决定VCCMIN。为了最大限度地提高缓存容量,LLC存储单元由接近最小尺寸的晶体管组成,这些晶体管对工艺变化非常敏感。对于传统的LLC,一小部分具有较大变化的存储单元限制了整个微处理器的VCCMIN。在本文中,容错技术动态地重新配置缓存,以禁用或纠正这些失败的存储单元,以较低的缓存容量为代价实现较低的VCCMIN,从而提高微处理器的能效。在高vcc运行模式下,cache以满负荷运行,以满足高性能目标。在低vcc工作模式下,能量消耗是主要考虑的问题,缓存动态重新配置较低的容量,以减轻失效存储单元对可靠性的影响。由于与高vcc模式相比,低vcc模式的时钟频率显著降低,因此缓存容量的减少对性能的影响较小。与传统的LLC设计相比,仿真结果表明,容错缓存技术使VCCMIN降低了13-28%,相当于每条指令的能量降低了20-42%。与假设的想法缓存相比,在低vcc操作模式下,添加这些技术只会导致5-10%的性能损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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