Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587896

K. Liao, R. Reif, T. Kamins

引用次数: 4

Abstract

Degradation of SiGe-base HBTs under high-forward-current and reverse-bias stresses are investigated. The observations are explained using existing homojunction theories. Inclusion of Ge into the base may potentially improve the junction reliability of bipolar transistors.

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电流和电压应力对硅基异质结双极晶体管直流特性的影响

研究了sige基HBTs在高正向电流和反向偏置应力下的降解。用现有的同结理论解释了这些观测结果。在基极中加入Ge可能会潜在地提高双极晶体管的结可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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